LED applications will become the driving force of the bulk GaN market, surpassing established laser diode (LD) and emerging power electronics segments. However, major changes could occur if 4 bulk GaN ...
A new technical paper titled “3 kV AlN Schottky Barrier Diodes on Bulk AlN Substrates by MOCVD” was published by researchers at Arizona State University. “This letter reports the first demonstration ...
Fremont, CA – October 23, 2013 – Soraa, the world leader in the development of GaN on GaN LED technology, announced today that it has been awarded several million dollars in funding by U.S. Department ...
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