Trench-based silicon carbide power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) represent a dramatic improvement in the Figure of Merit (FOM) values of power conversion switching ...
In the late 1990s I was working for a company that manufactures sub-systems for tramways, subways and light rail car manufacturers. One day my boss tells me that one of our inverters, a 5 kW DC to ...
GOLETA, Calif.--(BUSINESS WIRE)--Transphorm, Inc. (Nasdaq: TGAN), a global leader in GaN power semiconductors, the future of next generation power systems, today announced it has demonstrated up to 5 ...
Automotive applications need “smarter” drivers for their switches, which handle loads ranging from a fraction of an ampere to several amperes. Not only are these smart chips costly, but many times, ...
Field-effect transistors based on carbon nanotubes have been shown to be faster and less energy consuming than their silicon counterparts. However, ensuring these advantages are maintained for ...
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