DUBLIN--(BUSINESS WIRE)--Research and Markets (http://www.researchandmarkets.com/research/2113be/static_random_acce) has announced the addition of the "Static Random ...

Low power Static Random-Access Memory (SRAM) design remains at the forefront of research in modern electronics due to its critical role in minimising energy consumption while maintaining high ...

Micron Technology will exit the static RAM business. The memory maker on Thursday said it would stop producing its synchronous SRAM products, which are used mainly in communications gear. SRAM is ...

The 23LCV512 is a 512 kbit SPI serial static random-acess memory (SRAM) with battery backup and SDI interface. This device features uses low power CMOS technology and features unlimited read and write ...

Coughlin Associates and Objective Analysis released their 2024 report on emerging non-volatile memories, A Deep Look at New Memories. These memories include magnetic random access memory, MRAM; ...

The use of RFID and contactless smart card technology is exploding and devices (e.g. tags, tokens, cards) all require embedded memory arrays that suit the needs of the application. All of these ...

Researchers at Tohoku University have announced the demonstration of high-speed spin-orbit-torque (SOT) magnetoresistive random access memory cell compatible with 300 mm Si CMOS technology. The demand ...

RAM consists of a grid of memory cells, each capable of storing a small amount of data, typically one bit (binary digit) or a few bits. These cells are organized into rows and columns, forming a ...

The very first all-electronic memory was the Williams-Kilburn tube, developed in 1947 at Manchester University. It used a cathode ray tube to store bits as dots on the screen’s surface. The evolution ...