There is a great deal of activity in wide bandgap (WBG) power electronics lately, with Gallium Nitride (GaN) and Silicon Carbide (SiC) devices getting a lot of attention due to the technologies’ ...

Herein, wafer-scale 8-nm films of Sn-doped gallium oxide (Ga 2 O 3) were fabricated via physical vapor deposition at room temperature. Using these films, 8-nm Sn-doped Ga 2 O 3 field-effect ...

Kioxia says it has developed highly stackable oxide-semiconductor channel transistors capable of supporting high-density 3D DRAM. This development could lead to cheaper and faster memory by lowering ...

Integrated circuit (IC) sizes continue to grow as they meet the compute requirements of cutting-edge applications such as artificial intelligence (AI), autonomous driving, and data centers. As design ...

An international team of researchers from Queen Mary University of London, the University of Oxford, Lancaster University, and the University of Waterloo have developed a new single-molecule ...

A tough challenge for test engineers is explored in terms of test methods, pitfalls, and measurement errors. For the test engineer, RF and microwave power amplifier testing imposes unique challenges.

Designed for the toughest engineering environments, NXP Semiconductors N.V. (NASDAQ: NXPI) today unveiled its new XR family of “eXtremely Rugged” LDMOS RF power transistors. The XR family is designed ...

A transistor is a tiny but powerful electronic component that acts like a switch or an amplifier. It is made from a semiconductor material, usually silicon, and has three legs for connection to ...