The storage element in NAND flash memory is the floating gate MOSFET transistor. These devices are similar to a standard MOSFET device, other than there is an addition isolated gate. When a NAND flash ...
An ultrathin ferroelectric capacitor demonstrates strong electric polarization despite being just 30 nm thick including top ...
An ultrathin ferroelectric capacitor, designed by researchers from Japan, demonstrates strong electric polarization despite ...
Electronic devices power everyday life, from smartphones to medical sensors. Yet, as these gadgets grow in number, so does the mounting challenge of electronic waste, or e-waste. Physically transient ...
Computer memory could one day withstand the blazing temperatures in fusion reactors, jet engines, geothermal wells and sweltering planets using a new solid-state memory device developed by a team of ...
GDDR7 is the state-of-the-art graphics memory solution with a performance roadmap of up to 48 Gigatransfers per second (GT/s) and memory throughput of 192 GB/s per GDDR7 memory device. The next ...
Figure 1. Illustrations of the ultra-low power phase change memory device developed through this study and the comparison of power consumption by the newly developed phase change memory device ...
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Explained: What is a hash value? Why is it used in memory cards?
In many technology-related discussions—especially those involving memory cards, CCTV footage, or forensic evidence—you may ...
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