Abstract: We have developed an enhancement-mode GaN-on-Si MOS-FET with a thin GaN channel (40nm) on a thick AlGaN back barrier layer (1um), using Au-free 150-mm Si process. The developed device showed ...
Abstract: High frequency detection based on MOS-FET technology was long justified using a mechanism described by the plasma wave detection theory. In this paper we propose a new model based on the ...
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